October 28, 2024 to November 1, 2024
TOKYO ELECTRON House of Creativity (東北大学知の館), Tohoku University
Asia/Tokyo timezone

Ion-trapping properties of SCRIT: Target performance as a function of electron beam conditions

Oct 29, 2024, 6:00 PM
2h
TOKYO ELECTRON House of Creativity (東北大学知の館), Tohoku University

TOKYO ELECTRON House of Creativity (東北大学知の館), Tohoku University

Address : 2–1–1 Katahira, Aoba–ku, Sendai, Miyagi 980–8577 JAPAN

Speaker

Dr Ryo Ogawara (RIKEN Nishina Center)

Description

A SCRIT (Self-Confining RI Ion Target) method is a target-forming technique in an electron storage ring for electron scattering experiments with unstable nuclei. A target ion beam with a charge state of 1+ is injected into a SCRIT device. They are trapped transversely by periodic focusing forces from electron beam bunches and longitudinally by the electrostatic well-potential in the SCRIT device. The time evolution of luminosity during the ion trapping is monitored by the luminosity monitor. After ion trapping in the SCRIT device, the target ions are extracted and transported to the ion analyzer. The time evolutions of the trapped charge and charge state distributions were measured by the ion analyzer. Currently, the target ions trapped in the SCRIT contribute only 10–20% to the electron scattering. To improve the contribution ratio, optimizing the SCRIT performance is necessary. In this presentation, we report and discuss the target performance depending on the electron beam conditions for the target optimization.

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